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Talk by Dr.-Ing. Mehmet Kaynak, IHP Leibniz-Institut für innovative Mikroelektronik

Talk by Dr.-Ing. Mehmet Kaynak, IHP Leibniz-Institut für innovative Mikroelektronik
Datum: 20.07.2017

Latest Developments on SiGe BiCMOS Technologies with “More-than-Moore” Modules for mm-wave and THz Applications

Dr.-Ing. Mehmet Kaynak, IHP Leibniz-Institut für innovative Mikroelektronik, July 20th, 2:00 p.m., Room 342 (IPQ library), Building 30.10
Bild von Dr.-Ing. Mehmet Kaynak
Dr.-Ing. Mehmet Kaynak

In last decade, SiGe BiCMOS technologies open a new cost-efficient market at mm-wave frequencies. Starting with the commercial use of automotive radars at 77 GHz, the market now has a strong interest on radar, sensor and imaging products at mm-wave and sub-THz frequencies. The latest developments on SiGe HBTs with fmax of beyond 700 GHz boosts the research and development effort on circuit and system area to take share from the new market. In parallel to the developments on SiGe HBT performance, “More-than-Moore” path, which covers all the additional functionalities to the standard CMOS process (i.e. MEMS devices, microfluidics, photonics, heterogeneous integration, etc…), allows to realize multi-functional circuits and systems.

In this talk, the latest developments regarding the high-speed devices and circuits based on SiGe HBTs at IHP will be discussed. The “More-than-Moore” modules for multi-functional device and circuits will also be one of the core topic of discussion.

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