Title: Semiconductor Process Technologies (Halbleiter Prozesstechnologie)
Sommersemester: 2 SWS
Erfolgskontrolle(n): The success criteria will be determined by an oral examination (approx. 20-30 min.)
Modulnote: The module grade is the grade of the oral examination.
- The students acquire a comprehensive understanding of the integrated circuit fabrication of CMOS, BiCMOS and different MEMS processes, especially for mm-wave and THz applications.
- They have a good understanding of the different process steps (i.e. lithography, chemical vapor deposition, reactive ion etch, cleaning and etc.) of a CMOS process flow.
- They can describe a complex process flow of a CMOS process together with different high frequency modules such as MEMS and photonics.
- They can identify the pros and cons of different process flows; thus correlate it with the throughput, yield and cost aspects of the semiconductor industry.
- They are familiar with basic packaging approaches of integrated circuits and also special advanced packaging technologies for mm-wave and THz integrated circuits as well.
- They have the basic understanding of the scaling of CMOS industry and the future trends.
In this lecture the basic fabrication technologies of integrated circuits will be given together with the each individual process steps. The front-end and back-end of line parts of the full CMOS/BiCMOS process will be provided. The testing, process monitoring and throughput/yield studies of a CMOS process will be followed after basic understanding of the semiconductor process technologies. A special emphasis on MEMS process technologies will also be given and the integration challenges of additional modules into a CMOS/BiCMOS process will be detailed. Finally, the packaging aspect of the integrated circuit industry will be given for standard and advanced packaging needs. A basic topics planned to be studied under the course are given below:
- Integrated Circuit Processes
- Cleaning and wet processes
- Patterning Processes: Optical and E-beam lithography
- Thermal Processes: Oxidation, Diffusion, chemical vapor deposition
- Junction Formation: Ion Implantation, spin-on, annealing
- In-process monitoring, measurement techniques,
- Packaging: dicing , wire bonding, encapsulation
- Testing of Semiconductor Devices; Process Modelling and Yields
- MOS process integration and MEMS processes
- Scaling and Future trends
- Non Silicon processing: III-V , MBE, OMCVD
The lecture materials to „Grundlagen der Hochfrequenztechnik“ and „Halbleiterbauelemente“ are recommended.
Some other suggested references are given below:
- 1. Introduction to Microelectronic Fabrication; Jaeger; Prentice Hall
- 2. The Science and Engineering of Microelectronic Fabrication; Campbell; Oxford
- 3. Silicon Processing for the VLSI Era; Wolf and Tauber; Lattice Press
- 4. Microelectronics Processing and Device Design; Colclaser; Wiley
- 5. VLSI Technology; Sze; McGraw-Hill
Each credit point corresponds to an approximately 25-30h of workload in average. Based on this, the amount of work for this lecture is calculated as follows:
1. Attendance to the lectures (15*2=30h)
2. Preparation to the lectures (15*2=30h)
3. Preparation to the oral exam (40h)