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Institute of Radio Frequency Engineering and Electronics (IHE)

Engesserstraße 5

Building 30.10 (NTI)

76131 Karlsruhe

Tel.: +49 (0)721 608-42522
Fax.: +49 (0)721 608-45027
E-Mail: infoBva0∂ihe kit edu



Department at LTI:

Engesserstraße 13
Geb. 30.34 (LTI)
76131 Karlsruhe

Welcome to IHE

The Institute of Radio Frequency Engineering and Electronics (IHE) is an institute within the Faculty of Electrical Engineering and Information Technology of the division 3 Mechanical and Electrical Engineering of Karlsruhe Institute of Technology (KIT). 

The research areas of IHE are oriented towards novel systems in the microwave technology, with goals of realizing these novel systems for use in the industry or commercially.   

The major research subjects are:

In the courses offered by IHE, fundamental concepts as well as application-based knowledge are taught. Besides lectures, tutorials and labs, the students will learn through case studies and to apply their knowledge in practical situations. Early on students will be exposed to practice-oriented projects with project partners in the industry or research centers.


Head of the institute:

Prof. Dr.-Ing. Thomas Zwick



Latest Developments on SiGe BiCMOS Technologies with “More-than-Moore” Modules for mm-wave and THz Applications

Dr.-Ing. Mehmet Kaynak, IHP Leibniz-Institut für innovative Mikroelektronik, July 20th, 2:00 p.m., Room 342 (IPQ library), Building 30.10
Bild von Dr.-Ing. Mehmet Kaynak
Dr.-Ing. Mehmet Kaynak

In last decade, SiGe BiCMOS technologies open a new cost-efficient market at mm-wave frequencies. Starting with the commercial use of automotive radars at 77 GHz, the market now has a strong interest on radar, sensor and imaging products at mm-wave and sub-THz frequencies. The latest developments on SiGe HBTs with fmax of beyond 700 GHz boosts the research and development effort on circuit and system area to take share from the new market. In parallel to the developments on SiGe HBT performance, “More-than-Moore” path, which covers all the additional functionalities to the standard CMOS process (i.e. MEMS devices, microfluidics, photonics, heterogeneous integration, etc…), allows to realize multi-functional circuits and systems.

In this talk, the latest developments regarding the high-speed devices and circuits based on SiGe HBTs at IHP will be discussed. The “More-than-Moore” modules for multi-functional device and circuits will also be one of the core topic of discussion.

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