Design and Comparison of Differential/ Pseudo-differential RF Amplifier in SiGe Process
- Forschungsgebiet:mm-Wave circuit technology, mm-Wave systems, simulation, layout
Pseudo-differential pair is widely used in band-pass RF amplifiers. For CMOS process, it has been proven that the linearity of a pseudo-differential amplifier outruns that of a differential-pair amplifier. However, for SiGe HBT devices, few analysis has been done.
In this thesis, a differential and a pseudo-differential RF amplifier will be first designed in 0.13-µm SiGe BiCMOS process. Then, key matrics such as AM-AM, AM-PM, IMD3 and PAE should be compared. In addition, a theoretical analysis on the nonlinearity is encouraged to be done.
-Circuit desgin and simulation with Cadence SpectreRF or Keysight ADS
-Parasitics extraction using QRC and EM simulation using Momentum
-Layout in Cadence Virtuoso (DRC, LVS check)