Institut für Hochfrequenztechnik und Elektronik (IHE)

Design and Comparison of Differential/ Pseudo-differential RF Amplifier in SiGe Process

  • Forschungsgebiet:mm-Wave circuit technology, mm-Wave systems, simulation, layout
  • Typ:Bachelor-/Masterarbeit
  • Datum:Anytime
  • Betreuer:

    M.Sc Tsung-Ching Tsai

  • Zusatzfeld:

    In English

  • Pseudo-differential pair is widely used in band-pass RF amplifiers. For CMOS process, it has been proven that the linearity of a pseudo-differential amplifier outruns that of a differential-pair amplifier. However, for SiGe HBT devices, few analysis has been done.

    In this thesis, a differential and a pseudo-differential RF amplifier will be first designed in 0.13-µm SiGe BiCMOS process. Then, key matrics such as AM-AM, AM-PM, IMD3 and PAE should be compared. In addition, a theoretical analysis on the nonlinearity is encouraged to be done.


    -Circuit desgin and simulation with Cadence SpectreRF or Keysight ADS

    -Parasitics extraction using QRC and EM simulation using Momentum

    -Layout in Cadence Virtuoso (DRC, LVS check)

    TCT_Differential Pairs.pdf