Dr.-Ing. Mohammed Ali

The front-End Module (FEM) is a bidirectional component that is co-integrated in Package and is a crucial part for the 5G, beyond-5G and 6G applications. Such applications escalate demands for higher transmitter linearity, lower receiver sensitivity and broad bandwidth for up- and down-links. The third-generation semiconductor GaN technology boasts a larger bandgap, higher breakdown voltage, increased saturation electron velocity, and greater power capacity. This enables the realization of higher output power and efficiency in the cm- and mm-Wave front-ends.  Owing to the bidirectionality of the FEM, isolation between the Tx and the Rx directions is a critical design aspect. Being high gain, special stability tests for the PA and the LNA at both small signal and large signal regimes should be carried out. Single Pole Double Through (SPDT) switch with the GaN devices is integrated on the FEM chip with a compromise between chip area and isolation level. In this project, a carful design of bidirectional FEM chip will be carried out with focus on output power of the Tx path and noise figure of the Rx path.