M.Sc. Henning Poensgen

The growing demand for high-data-rate wireless communication systems has accelerated research in the D-band frequency range (110–170 GHz). In receiver front-ends, low-noise amplifiers (LNAs) are critical components, as their noise figure directly determines the overall system sensitivity. Achieving wideband operation with low noise performance is therefore essential to ensure reliable signal reception at millimeter-wave frequencies.

This thesis focuses on the design of a wideband, low-noise amplifier operating at D-band frequencies using a state-of-the-art III–V InP HBT technology. Compared to silicon-based technologies, III–V devices offer higher transit frequencies and superior noise performance at millimeter-wave frequencies, making them particularly suitable for D-band applications.

The key task is the investigation, design, and comparison of different circuit topologies, which will be optimized with respect to wideband performance and low noise characteristics. The analysis and design will be carried out using Keysight ADS and Cadence Virtuoso.