M.Sc. Christian Bohn

  • Geb. 30.10
    Raum 1.32
    Engesserstraße 5
    76131 Karlsruhe

  • Ultra Wideband mmW Circuits
  • RFIC packaging
  • Electronic-Photonic Integrated Systems


A Linear and Efficient Power Amplifier Supporting Wideband 64-QAM for 5G Applications from 26 to 30 GHz in SiGe:C BiCMOS.
Tsai, T.-C.; Bohn, C.; Hebeler, J.; Kaynak, M.; Ulusoy, A. Ç.
2021. 2021 IEEE RFIC Symposium: 7-9 June 2021, Atlanta, Georgia, USA, 127–130, Institute of Electrical and Electronics Engineers (IEEE). doi:10.1109/RFIC51843.2021.9490461
50GBit/s PAM-4 Driver Circuit Based on Variable Gain Distributed Power Combiner.
Vangerow, C. v.; Bohn, C.; Zwickel, H.; Koos, C.; Zwick, T.
2019. IEEE 19th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 1–3, Institute of Electrical and Electronics Engineers (IEEE). doi:10.1109/sirf.2019.8709086
All-NbN technology on sapphire substrates for SIS-based THz receivers.
Merker, M.; Bohn, C.; Schmid, A.; Ilin, K. S.; Siegel, M.
2018. 29th IEEE International Symposium on Space Terahertz Technology, ISSTT 2018: Proceedings, 117–119
NbN/AlN/NbN Josephson Junctions on Sapphire for SIS Receiver Applications.
Merker, M.; Bohn, C.; Völlinger, M.; Ilin, K.; Siegel, M.
2017. IEEE transactions on applied superconductivity, 27 (4), 7779058. doi:10.1109/TASC.2016.2631841