J. Aghassi-Hagmann graduated in physics from the RWTH Aachen with distinction and received her Ph.D. from Karlsruhe University. In 2007 she joined Infineon Technologies in Munich focusing on CMOS low power development for wireless applications. During that time she worked as modeling and device expert in the IBM Semiconductor Alliance in East Fishkill, USA. In 2011 she moved on to Intel Mobile Communications as a Platform Technology Manager for RF 28 nm CMOS technology. She joined KIT in 2012 as a group leader for Low Power Electronics with Advanced Materials and was additionally appointed in 2013 as a full professor in electrical engineering at the applied university of Offenburg. Since 2021 she is full professor and chair of a research unit “Electronic Devices and Systems in Future Technologies” at the KIT, Institute of Nanotechnology, located at KIT campus north.
Her current research focuses on printed electronics devices and circuits, including novel semiconductor devices based on advanced materials as well as device modeling and simulation for sensing, bioelectronics and security applications. She has authored and coauthored more than 50 publications in these fields.